The electrical band-gap energy of porous silicon measured versus sample temperature

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Standard

The electrical band-gap energy of porous silicon measured versus sample temperature. / Frederiksen, Jacob Trier; Melcher, Pia Grethe; Veje, E.

I: Journal of Porous Materials, Bind 7, Nr. 1-3, 2000, s. 271-273.

Publikation: Bidrag til tidsskrift › Konferenceartikel › Forskning › fagfællebedømt

Harvard

Frederiksen, JT, Melcher, PG & Veje, E 2000, 'The electrical band-gap energy of porous silicon measured versus sample temperature', Journal of Porous Materials, bind 7, nr. 1-3, s. 271-273. https://doi.org/10.1023/a:1009679930431

APA

Frederiksen, J. T., Melcher, P. G., & Veje, E. (2000). The electrical band-gap energy of porous silicon measured versus sample temperature. Journal of Porous Materials, 7(1-3), 271-273. https://doi.org/10.1023/a:1009679930431

Vancouver

Frederiksen JT, Melcher PG, Veje E. The electrical band-gap energy of porous silicon measured versus sample temperature. Journal of Porous Materials. 2000;7(1-3):271-273. https://doi.org/10.1023/a:1009679930431

Author

Frederiksen, Jacob Trier ; Melcher, Pia Grethe ; Veje, E. / The electrical band-gap energy of porous silicon measured versus sample temperature. I: Journal of Porous Materials. 2000 ; Bind 7, Nr. 1-3. s. 271-273.

Bibtex

@inproceedings{11330589913f45ed825096b593cbddf5,
title = "The electrical band-gap energy of porous silicon measured versus sample temperature",
abstract = "Photocurrent measurements have been carried out on a series of samples consisting of porous silicon on top of crystalline silicon, in the temperature range 10-300 K. From the experimental data set, the electrical band-gap energy of porous silicon is deduced to be (1.80 ±0.01) eV, independent of sample temperature. The results are discussed with the conclusion that for the samples studied here, the electrical bandgap in porous silicon is of molecular nature and cannot be related to quantum-confinement properties of nanocrystals of elemental silicon.",
keywords = "Energy band gap, Photoconductivity, Porous silicon",
author = "Frederiksen, {Jacob Trier} and Melcher, {Pia Grethe} and E Veje",
note = "(Ekstern); Proceedings of the 1998 1st International Conference on Porous Semiconductors - Science and Technology (PSST-98) ; Conference date: 16-03-1998 Through 20-03-1998",
year = "2000",
doi = "10.1023/a:1009679930431",
language = "English",
volume = "7",
pages = "271--273",
journal = "Journal of Porous Materials",
issn = "1380-2224",
publisher = "Springer Netherlands",
number = "1-3",

}

RIS

TY - GEN

T1 - The electrical band-gap energy of porous silicon measured versus sample temperature

AU - Frederiksen, Jacob Trier

AU - Melcher, Pia Grethe

AU - Veje, E

N1 - (Ekstern)

PY - 2000

Y1 - 2000

N2 - Photocurrent measurements have been carried out on a series of samples consisting of porous silicon on top of crystalline silicon, in the temperature range 10-300 K. From the experimental data set, the electrical band-gap energy of porous silicon is deduced to be (1.80 ±0.01) eV, independent of sample temperature. The results are discussed with the conclusion that for the samples studied here, the electrical bandgap in porous silicon is of molecular nature and cannot be related to quantum-confinement properties of nanocrystals of elemental silicon.

AB - Photocurrent measurements have been carried out on a series of samples consisting of porous silicon on top of crystalline silicon, in the temperature range 10-300 K. From the experimental data set, the electrical band-gap energy of porous silicon is deduced to be (1.80 ±0.01) eV, independent of sample temperature. The results are discussed with the conclusion that for the samples studied here, the electrical bandgap in porous silicon is of molecular nature and cannot be related to quantum-confinement properties of nanocrystals of elemental silicon.

KW - Energy band gap

KW - Photoconductivity

KW - Porous silicon

U2 - 10.1023/a:1009679930431

DO - 10.1023/a:1009679930431

M3 - Conference article

AN - SCOPUS:0033879143

VL - 7

SP - 271

EP - 273

JO - Journal of Porous Materials

JF - Journal of Porous Materials

SN - 1380-2224

IS - 1-3

T2 - Proceedings of the 1998 1st International Conference on Porous Semiconductors - Science and Technology (PSST-98)

Y2 - 16 March 1998 through 20 March 1998

ER -

ID: 326347741